Vacancy expired!
Title:(PO) Lead Principal Engineer, Wafer Technology & Device DevelopmentLocation:Chandler, AZ + Dallas, TX Fulltime Job Description: Leads the development of Radiation Hardened and Radiation Tolerant GaN power switchesActively contributes in roadmaps and future technology brainstorming discussionsDefines device design and fabrication platform specifics to meet the application targets in a manufacturable and cost effective mannerPerforms device and process simulations, photo mask design and testingSupports the platform/product design review processCoaches junior staff in the team in device design and fabrication processUtilize knowledge of prior art, by writing up a description of the new invention and working with the IP team to file a disclosure 5-10 years of experience in leading GaN technology developmentWell-versed in HEMT device physics and fabrication of GaN power switchesProficient in Synopsys TCAD and Cadence suite of software along with electrical testing of GaN power switches, DOE definition and analysis using JMP. Experience in Radiation Hardened preferredMS or PhD in Electrical Engineering preferred or in Materials Science with focus on GaNMust have ability to work & communicate effectively with cross-functional team members located across the globeYou must be data driven and use quantitative analysis skills to understand complex situations and collaboratively drive towards creative solutions even if they are not yours.
- ID: #49228019
-
State: Texas
Dallas / fort worth
75201
Dallas / fort worth
USA
- City: Dallas / fort worth
- Salary: Depends on Experience
- Job type: Permanent
- Showed: 2023-02-15
- Deadline: 2023-04-15
- Category: Et cetera